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Broadband GaAs MESFET and GaN HEMT resistive feedback power amplifiers

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6 Author(s)
Krishnamurthy, K. ; Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA ; Vetury, R. ; Keller, Stacia ; Mishra, Umesh
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We report 0.2 to 6-GHz MMIC power amplifiers with 12-dB gain, over 23-dBm output power, and more than 25% power-added efficiency (PAE) in a GaAs MESFET technology offering 18 GHz f/sub /spl tau// and 12-V breakdown. These circuits have gain-bandwidth products of /spl sim/1.3/spl middot/f/sub /spl tau// and are more efficient than distributed power amplifiers. A first demonstration of similar circuits in GaN/AlGaN HEMT technology yielded 11-dB gain, 0.2 to 7.5-GHz bandwidth amplifiers with over 31.5-dBm output power and up to 15% PAE. With improved devices and models we expect significantly higher power from the GaN HEMT circuits.

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Solid-State Circuits, IEEE Journal of  (Volume:35 ,  Issue: 9 )