A high-speed monolithic silicon photoreceiver fabricated on SOI

We report a monolithically integrated optical receiver fabricated on an SOI substrate. The receiver consists of a lateral p-i-n photodiode and an NMOS transimpedance preamplifier. At V/sub DD/=5 V, the receiver dissipated 37 mW of power with a typical transimpedance gain of 49 dB./spl Omega/. At operating speeds of 622 Mb/s and 1.0 and 2.0 Gb/s, the receiver achieved a bit error ratio of 10/sup -9/ at received powers of -31.6, -25.7, and -17.7 dBm, respectively.