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A high-speed monolithic silicon photoreceiver fabricated on SOI

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4 Author(s)
Li, R. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Schaub, J.D. ; Csutak, S.M. ; Campbell, J.C.

We report a monolithically integrated optical receiver fabricated on an SOI substrate. The receiver consists of a lateral p-i-n photodiode and an NMOS transimpedance preamplifier. At V/sub DD/=5 V, the receiver dissipated 37 mW of power with a typical transimpedance gain of 49 dB./spl Omega/. At operating speeds of 622 Mb/s and 1.0 and 2.0 Gb/s, the receiver achieved a bit error ratio of 10/sup -9/ at received powers of -31.6, -25.7, and -17.7 dBm, respectively.

Published in:

Photonics Technology Letters, IEEE  (Volume:12 ,  Issue: 8 )