Referenced Items are not available for this document.
The design of a non-volatile analog memory is presented. The specificity of this memory lies in the fact that it is realized in standard AMS 0.8 μm CMOS technology. The concept is based on the model of the floating gate transistor which sees its threshold voltage modified following the amount of carriers which are on its gate. The carrier injection physics rests on cold tunneling (Fowler-Nordheim effect)
Published in:
Circuits and Systems, 1999. 42nd Midwest Symposium on
(Volume:1
)
Date of Conference: 1999
- Page(s):
- 153 - 156 vol. 1
- Meeting Date :
- 08 Aug 1999-11 Aug 1999
- Print ISBN:
- 0-7803-5491-5
- INSPEC Accession Number:
- 6788684
- Conference Location :
- Las Cruces, NM
- Digital Object Identifier :
- 10.1109/MWSCAS.1999.867231
- Product Type:
- Conference Publications
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