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The temperature effect on sequential resonant tunneling in single bound state multiple-quantum-well structure

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3 Author(s)
Yuanjian Xu ; Dept. of Appl. Phys., California Inst. of Technol., Pasadena, CA, USA ; Shakouri, A. ; Yariv, A.

Summary form only given. The nonuniform electric field distribution in voltage-biased multiple-quantum-well (MQW) structure resulting from sequential resonant tunneling (SRT) causes discontinuity in the current-voltage characteristics, and is a mainly low temperature effect. In this talk we discuss the temperature dependence of SRT and the electric field distribution in GaAs MQWs.

Published in:

Quantum Electronics and Laser Science Conference, 1996. QELS '96., Summaries of Papers Presented at the

Date of Conference:

7-7 June 1996