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A new approach to mesh generation for complex 3D semiconductor device structures

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3 Author(s)
Tanaka, K. ; Microelectron. Res. Labs., NEC Corp., Sagamihara, Japan ; Notsu, A. ; Matsumoto, H.

A new approach to mesh generation for general 3D domain is proposed. A prototype mesh generator which utilizes octree for easy manipulation of 3D structures, is developed. It shows that "well-fitted" tetrahedral mesh can be constructed assuming that an appropriate triangular mesh upon the boundary is given. There is a good chance that adaptive meshing and moving boundary will be managed well in this mesh generation method.

Published in:

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Date of Conference:

2-4 Sept. 1996