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A new high-speed non-equilibrium point defect model for annealing simulation

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3 Author(s)
Kawakami, M. ; Semicond. Dev. Center, Hitachi Ltd., Kokubunji, Japan ; Sugaya, M. ; Kamohara, S.

As state-of-the-art processes involve fast annealing times at reduced temperatures, it has become increasingly important to incorporate non-equilibrium point defect modeling into the simulation of diffusion. Nonequilibrium point defect modeling takes into account the actual distribution of the defects in the silicon when simulating the annealing of impurities. However, simulation time increases dramatically with the number of equations necessary to simulate multiple types of impurities simulated simultaneously (by a factor of n2, n=no. of equations). Previous physically-based methods used 1D simulation of one impurity, since 2D simulation of multiple impurities required excessive CPU time making it difficult to use for practical applications. In this work, for the first time, a high-speed physically-based 2D method of simulating the annealing of multiple impurities is presented which requires only a fraction of the CPU time for simulation of several impurities simultaneously.

Published in:

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Date of Conference:

2-4 Sept. 1996