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Simulation of thermal oxidation and diffusion processes by parallel PDE solver LiSS

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2 Author(s)
Joppich, W. ; German Nat. Res. Center for Comput. Sci., St. Augustin, Germany ; Mijalkovic, S.

In this paper a rigorous approach to simulate thermal oxidation and diffusion phenomena is presented. Because the numerical problems will increase in future, especially when looking towards three-dimensional process simulation, special emphasis is laid upon a parallel approach which additionally uses an optimal order solution method. Based on an environment for the parallel solution of elliptic and parabolic PDEs, LiSS, such a tool was developed.

Published in:

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Date of Conference:

2-4 Sept. 1996