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Phase space multiple refresh: a versatile statistical enhancement method for Monte Carlo device simulation

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5 Author(s)
C. Jungemann ; Fujitsu Labs. Ltd., Kawasaki, Japan ; S. Decker ; R. Thoma ; W. L. Eng
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In this abstract we describe a new Multiple Refresh (MR) technique for Monte Carlo (MC) device simulation which is an improved version of a method developed for bulk simulations. The purpose of this method is to enhance statistics of rare events (e.g. impact ionisation, oxide injection) without increasing the number of common events (i.e. low energetic particles). The MR technique allows to control directly the stochastic noise of the MC simulation in predefined regions of phase space by maintaining a given number of particles in these regions. We apply the method to an LDD-NMOSFET.

Published in:

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Date of Conference:

2-4 Sept. 1996