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In this abstract we describe a new Multiple Refresh (MR) technique for Monte Carlo (MC) device simulation which is an improved version of a method developed for bulk simulations. The purpose of this method is to enhance statistics of rare events (e.g. impact ionisation, oxide injection) without increasing the number of common events (i.e. low energetic particles). The MR technique allows to control directly the stochastic noise of the MC simulation in predefined regions of phase space by maintaining a given number of particles in these regions. We apply the method to an LDD-NMOSFET.