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Modeling and simulation of oxygen precipitation in Si: precipitate-point defect interactions and influence of hydrogen

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3 Author(s)
Senkader, S. ; Inst. fur Solid-State Electron., Tech. Univ. Wien, Austria ; Hobler, G. ; Schmeiser, C.

In this work we present recent model developments which describes the precipitation of oxygen and the formation of stacking faults simultaneously in Czochralski-silicon wafers using rate- and Fokker-Planck equations. We have improved the model to consider the influence of vacancies on precipitation in addition that of self interstitials. A partitioning between vacancies and self interstitials is obtained by assuming that the system always seeks its minimum energy configuration. We additionally report our attempt to model the influence of hydrogen on oxygen precipitation.

Published in:

Simulation of Semiconductor Processes and Devices, 1996. SISPAD 96. 1996 International Conference on

Date of Conference:

2-4 Sept. 1996