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Performance and physics of quantum-dot lasers with self-assembled columnar-shaped and 1.3-/spl mu/m emitting InGaAs quantum dots

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5 Author(s)
Sugawara, M. ; Fujitsu Labs. Ltd., Atsugi, Japan ; Mukai, K. ; Nakata, Y. ; Otsubo, Koji
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This paper reports recent developments of our self-assembled InGaAs quantum-dot (QD) lasers and their unique physical properties. We achieved a low-threshold current of 5.4 mA at room temperature with our originally designed columnar-shaped QD's, and also, room-temperature 1.3-/spl mu/m continuous-wave (CW) lasing with self-assembled dots grown at a decreased growth rate and covered by a strained InGaAs layer. We discuss influence of homogeneous broadening of single-dot optical gain on lasing spectra, influence of nonradiative carrier recombination on temperature characteristics of threshold currents, a model for the origin of the homogeneous broadening, a finding of random telegraph signals, and suppression of temperature sensitivity of interband emission energy by covering dots with a strained InGaAs layer.

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Selected Topics in Quantum Electronics, IEEE Journal of  (Volume:6 ,  Issue: 3 )