N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition

Summary form only given. It is expected that an n-type modulation-doped quantum well (QW) lasers can achieve a reduction in threshold current. In this report, we have demonstrated strained InGaAs-AlGaAs QW lasers employing the n-type modulation doping for reducing threshold current for the first time. The active region of QW lasers was grown by a low pressure metal organic chemical vapor deposition.