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N-type modulation-doped strained InGaAs/AlGaAs quantum well lasers grown by metal organic chemical vapor deposition

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6 Author(s)
Hatori, N. ; Precision & Intelligence Lab., Tokyo Inst. of Technol., Japan ; Mukaihara, T. ; Ohnoki, N. ; Mizutani, A.
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Summary form only given. It is expected that an n-type modulation-doped quantum well (QW) lasers can achieve a reduction in threshold current. In this report, we have demonstrated strained InGaAs-AlGaAs QW lasers employing the n-type modulation doping for reducing threshold current for the first time. The active region of QW lasers was grown by a low pressure metal organic chemical vapor deposition.

Published in:

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Date of Conference:

2-7 June 1996

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