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Large nonbiased optical bistability device in electroabsorption modulator using symmetric two p-i-n-i-p diode structures

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6 Author(s)
O. K. Kwon ; Dept. of Res., Electron. & Telecommun. Res. Inst., Taejon, South Korea ; K. S. Hyun ; K. Kim ; E. -H. Lee
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Summary form only given. We have successfully demonstrated an improved nonbiased optical bistability in an GaAs-AlGaAs QW electroabsorption modulator by utilizing nonresonant p-i-n-i-p structure, which has large E while maintaining sufficient light absorption with no external bias.

Published in:

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Date of Conference:

2-7 June 1996