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Summary form only given. We present a new growth technique for InGaAsP to achieve short carrier lifetimes: He plasma-assisted molecular beam epitaxy. This technique yields a material with an ultrashort carrier lifetime, while maintaining the sharp band edge of material grown without a He plasma. We show that He-plasma-assisted-grown InGaAsP is a convenient means to obtain an ultrafast response and a strong nonlinearity at the important telecommunications wavelength of 1.55 /spl mu/m.