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Picosecond carrier lifetime in InGaAsP grown by He plasma-assisted molecular beam epitaxy

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6 Author(s)
Benjamin, S.D. ; Dept. of Electr. & Comput. Eng., Toronto Univ., Ont., Canada ; Li Quan ; Ehrlich, J.E. ; Smith, P.W.E.
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Summary form only given. We present a new growth technique for InGaAsP to achieve short carrier lifetimes: He plasma-assisted molecular beam epitaxy. This technique yields a material with an ultrashort carrier lifetime, while maintaining the sharp band edge of material grown without a He plasma. We show that He-plasma-assisted-grown InGaAsP is a convenient means to obtain an ultrafast response and a strong nonlinearity at the important telecommunications wavelength of 1.55 /spl mu/m.

Published in:

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Date of Conference:

2-7 June 1996