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The study of nonlinear optical effects of GaN and AlGaN epitaxial films

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6 Author(s)
H. Y. Zhang ; Phys. Dept., Maryland Univ., Baltimore, MD, USA ; X. H. He ; Y. H. Shih ; M. Schurman
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Summary form only given. Here we report the study of nonlinear optical effects and waveguide modes of wide-bandgap and band-gap tunable semiconductor GaN and Al/sub x/Ga/sub 1-x/N epitaxial films. Low-pressure metalorganic vapor deposition (MOCVD) was used to grow epitaxial GaN and AlGaN layers on (0001) sapphire substrate. The UV absorbance spectra of a GaN film (with thickness 2.1 /spl mu/m) is shown.

Published in:

Lasers and Electro-Optics, 1996. CLEO '96., Summaries of papers presented at the Conference on

Date of Conference:

2-7 June 1996