Cart (Loading....) | Create Account
Close category search window

Temperature dependence of gain saturation in multilevel quantum dot lasers

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

3 Author(s)
Park, G. ; Dept. of Electr. & Comput. Eng., Texas Univ., Austin, TX, USA ; Shchekin, O.B. ; Deppe, D.G.

The temperature dependence of quantum dot (QD) optical gain is analyzed using a multilevel model and compared with experiment. The maximum gain is found to have a surprisingly strong temperature dependence that causes level switching and can limit laser performance in QD lasers. The model based on multiple discrete levels elucidates general design criteria that should be satisfied to obtain a stable threshold versus temperature in QD lasers. Good agreement is obtained between calculations and experiment for level switching in 1.3-/spl mu/m QD lasers.

Published in:

Quantum Electronics, IEEE Journal of  (Volume:36 ,  Issue: 9 )

Date of Publication:

Sept. 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.