Characteristics of amorphous tungsten nitride diffusion barrier for metal-organic chemical vapor deposited Cu metallization

Copper thin films are deposited on amorphous tungsten nitride diffusion barrier by metal organic chemical vapor deposition method. The resistivity of Cu film is considerably higher than those of Cu films deposited on SiO/sub 2/ boro phospho-silica glass, and Si due to substrate driven reaction. RBS, XTEM and XRD measurements clearly show that 100-800 A amorphous W/sub 67/N/sub 33/, layer successfully executes the role of diffusion barrier for Cu during the annealing process at 800 /spl deg/C for 30 min.