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Analysis and future trend of short-circuit power

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2 Author(s)
Nose, K. ; Inst. of Ind. Sci., Tokyo Univ., Japan ; Sakurai, T.

A closed-form expression for short-circuit power dissipation of CMOS gates is presented which takes short-channel effects into consideration. The calculation results show good agreement with the SPICE simulation results over wide range of load capacitance and channel length. The change in the short-circuit power, PS, caused by the scaling in relation to the charging and discharging power, PD , is discussed and it is shown that basically power ratio, PS /(PD+PS), will not change with scaling if V TH/VDD is kept constant. This paper also handles the short-circuit power of series-connected MOSFET structures which appear in NAND and other complex gates

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:19 ,  Issue: 9 )