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Low-cost 38 and 77 GHz CPW MMICs using ion-implanted GaAs MESFETs

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9 Author(s)
Caruth, D.C. ; Dept. of Electr. & Comput. Eng., Illinois Univ., Urbana, IL, USA ; Shimon, R.L. ; Heins, M.S. ; Hsia, H.
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Oscillators, amplifiers, and frequency doublers at 38 and 77 GHz have been fabricated using direct ion-implanted GaAs MESFETs and CPW. The 38-GHz VCO delivers 12 d8m of power and the 77-GHz amplifier has 7.5 dB of gain. The various circuit results demonstrate that the direct ion-implanted GaAs MESFET process is a low-cost alternative to more expensive epitaxial device technologies for a wide variety of existing and emerging millimeter-wave circuit applications.

Published in:

Microwave Symposium Digest. 2000 IEEE MTT-S International  (Volume:2 )

Date of Conference:

11-16 June 2000