Referenced Items are not available for this document.
Technologies for narrow-channel effect suppression in photodiodes (PDs) and vertical CCDs (V-CCDs) and for smear reduction in PDs have been developed in order to improve dynamic range in small pixel interline-transfer CCD (IT-CCD) image sensors. The new technologies have been applied to a progressive-scan IT-CCD image sensor with 5 μm square pixels and have (1) increased the charge handling capability of its V-CCDs to 4500 electrons/V; (2) improved its smear value to -95 dB; and (3) increased the saturation charge of its PDs to 2.3×104 electrons
Published in:
Electron Devices, IEEE Transactions on
(Volume:47
,
Issue:
9
)
Date of Publication: Sep 2000
- Page(s):
- 1700 - 1706
- ISSN :
- 0018-9383
- INSPEC Accession Number:
- 6693547
- Digital Object Identifier :
- 10.1109/16.861580
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Sep 2000
- Sponsored by :
- IEEE Electron Devices Society
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