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A 40-Gbit/s monolithic digital OEIC module composed of uni-traveling-carrier photodiode and InP HEMT decision circuit

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7 Author(s)
Murata, I. ; NTT Network Innovation Labs., Japan ; Kitabayashi, H. ; Shimizu, N. ; Kimura, S.
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The authors describe an optoelectronic decision IC that is a monolithic combination of a uni-traveling-carrier photodiode and 0.1 /spl mu/m InAlAs-InGaAs-InP HEMTs for broadband optical fiber communication systems. The fabricated chip is packaged as an OEIC module, and 40 Gbit/s error-free operation is confirmed for an RZ data stream at the clock rate of 40 GHz for the first time.

Published in:

Microwave Symposium Digest. 2000 IEEE MTT-S International  (Volume:1 )

Date of Conference:

11-16 June 2000