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Room temperature GaInAsSb/GaSb quantum well laser for tunable diode laser absorption spectroscopy around 2.35 μm

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7 Author(s)
Vicet, A. ; Centre d''Electron. et de Micro-Optoelectron., Univ. des Sci. et Tech. du Languedoc, Montpellier, France ; Nicolas, J.-C. ; Genty, F. ; Rouillard, Y.
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Novel GaInAsSb/GaSb multiple quantum well lasers grown by molecular beam epitaxy have successfully operated in continuous wave around 2.35 μm at room temperature. The temperature and current tuning properties have been characterised by tunable diode laser absorption spectroscopy. These optical properties allowed a wide spectral scan from 2.27 μm to 2.36 μm. Experiments of gas absorption have been carried out in direct absorption measurements in continuous wave regime. From the point of view of trace gas analysis, wavelength modulation has been successfully performed at 19°C around 2.36 μm. An external cavity has then been added to the setup to obtain monomodal emission. These appealing results are very attractive for portable low-cost and room temperature trace pollutants analysis

Published in:

Optoelectronics, IEE Proceedings -  (Volume:147 ,  Issue: 3 )

Date of Publication:

Jun 2000

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