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HEMT-HBT matrix amplifier

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1 Author(s)
Paoloni, C. ; Dipt. di Energia Elettrica, Rome Univ., Italy

A novel matrix amplifier using simultaneously high electron-mobility transistors (HEMTs) and heterojunction bipolar transistors (HBTs) is proposed in this paper. The amplifier includes HEMTs in the first tier and HBTs in the second tier. The HEMT-HBT matrix amplifier in comparison to the HEMT matrix amplifier presents a notable lower dc power consumption without remarkable gain and bandwidth reduction, maintaining the advantage of using HEMTs in the first tier. A theory to demonstrate that the amplifier performance can be optimized if the HBTs in the second tier are properly chosen is also proposed. A comparison among the HEMT-HBT matrix amplifier, HEMT matrix amplifier, and HBT matrix amplifier is also presented

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:48 ,  Issue: 8 )