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Interpretation and control of C-V measurements using pattern recognition and expert system techniques

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3 Author(s)
J. A. Walls ; Digital Equipment Scotland Ltd., Queensferry, UK ; A. J. Walton ; J. M. Robertson

The authors demonstrate how a pattern-recognition system can be applied to the interpretation of capacitance-voltage (C-V ) curves on an MOS test structure. By intelligently sequencing additional measurements it is possible to accurately extract the maximum amount of information available from C-V and conductance-voltage (G-V) measurements. The expert system described, (CV-EXPERT), is completely integrated with the measurement, instrumentation, and control software and is thus able to call up a sequence of individually tailored tests for the MOS test structure under investigation. The prototype system is able to correctly identify a number of process faults, including a leaky oxide, as shown. Improvements that could be gained from developing rules to coordinate G-V, capacitance-time, and doping profile measurements simply by recognizing the important factors in the initial C- V measurement are illustrated

Published in:

IEEE Transactions on Semiconductor Manufacturing  (Volume:4 ,  Issue: 3 )