The authors demonstrate how a pattern-recognition system can be applied to the interpretation of capacitance-voltage (C-V ) curves on an MOS test structure. By intelligently sequencing additional measurements it is possible to accurately extract the maximum amount of information available from C-V and conductance-voltage (G-V) measurements. The expert system described, (CV-EXPERT), is completely integrated with the measurement, instrumentation, and control software and is thus able to call up a sequence of individually tailored tests for the MOS test structure under investigation. The prototype system is able to correctly identify a number of process faults, including a leaky oxide, as shown. Improvements that could be gained from developing rules to coordinate G-V, capacitance-time, and doping profile measurements simply by recognizing the important factors in the initial C- V measurement are illustrated
Published in:
Semiconductor Manufacturing, IEEE Transactions on
(Volume:4
,
Issue:
3
)
Date of Publication:
Aug 1991
- Page(s):
-
250
-
262
- ISSN :
-
0894-6507
- INSPEC Accession Number:
-
4035853
- Digital Object Identifier :
-
10.1109/66.85947
- Product Type:
-
Journals & Magazines
- Date of Current Version :
-
06 August 2002
- Issue Date :
-
Aug 1991
- Sponsored by :
-
IEEE Components, Packaging and Manufacturing Technology Society