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Modeling BJT radiation response with non-uniform energy distributions of interface traps

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6 Author(s)
Barnaby, H.J. ; Dept. of Electr. & Comuput. Eng., Vanderbilt Univ., Nashville, TN, USA ; Cirba, C. ; Schrimpf, R.D. ; Kosier, S.L.
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Radiation-induced oxide defects that degrade electrical characteristics of BJTs can be measured with the use of gated diodes. The buildup of defects and their effect on device radiation response are modeled with computer simulation

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Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on

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