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Amorphization of silicon via electronic processes induced by fullerenes irradiations

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4 Author(s)
Canut, B. ; Dept. de Phys. des Mater., Univ. Claude Bernard, Villeurbanne, France ; Bonardi, N. ; Ramos, S.M.M. ; Della-Negra, S.

For the first time we show that single crystalline silicon is sensitive to collective electronic excitations. Irradiations with C60 clusters accelerated in the 10 MeV range induce the formation of amorphous latent tracks in this material

Published in:

Radiation and Its Effects on Components and Systems, 1999. RADECS 99. 1999 Fifth European Conference on

Date of Conference:

1999