Cart (Loading....) | Create Account
Close category search window

Fault detection of plasma etchers using optical emission spectra

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Yue, H.H. ; Tokyo Electron America Inc., Austin, TX, USA ; Qin, S.Joe ; Markle, R.J. ; Nauert, C.
more authors

The objective of this paper is to investigate the suitability of using optical emission spectroscopy (OES) for the fault detection and classification of plasma etchers. The OES sensor system used in this study can collect spectra at up to 512 different wavelengths. Multiple scans of the spectra are taken from a wafer, and the spectra data are available for multiple wafers. As a result, the amount of the OES data is typically large. This poses a difficulty in extracting relevant information for fault detection and classification. In this paper, we propose the use of multiway principal component analysis (PCA) to analyze the sensitivity of the multiple scans within a wafer with respect to typical faults such as etch stop, which is a fault that occurs when the polymer deposition rate is larger than the etch rate. Several PCA-based schemes are tested for the purpose of fault detection and wavelength selection. A sphere criterion is proposed for wavelength selection and compared with an existing method in the literature. To construct the final monitoring model, the OES data of selected wavelengths are properly scaled to calculate fault detection indices. Reduction in the number of wavelengths implies reduced cost for implementing the fault detection system. All experiments are conducted on an Applied Materials 5300 oxide etcher at Advanced Micro Devices (AMD) in Austin, TX

Published in:

Semiconductor Manufacturing, IEEE Transactions on  (Volume:13 ,  Issue: 3 )

Date of Publication:

Aug 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.