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In most cases steady-state semiconductor device equations are solved simultaneously by Newton's method, by Gummel's decoupled nonlinear relaxation scheme, or a combination of both. A framework deriving such different iterative methods from underlying variable transformations is presented. Within that framework the introduction of a new variable establishes a new nonlinear relaxation scheme, which is significantly faster than Gummel's scheme in cases where it converges slowly, thereby avoiding the drawbacks of a simultaneous solution method. This relaxation scheme has been implemented in the two-dimensional device simulator GALENE II
Published in:
Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on
(Volume:10
,
Issue:
9
)
Date of Publication: Sep 1991
- Page(s):
- 1175 - 1186
- ISSN :
- 0278-0070
- INSPEC Accession Number:
- 4025292
- Digital Object Identifier :
- 10.1109/43.85764
- Product Type:
- Journals & Magazines
- Date of Current Version :
- 06 August 2002
- Issue Date :
- Sep 1991
- Sponsored by :
- IEEE Council on Electronic Design Automation
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