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1.7 GHz bipolar optoelectronic receiver using conventional 0.8 μm BiCMOS process

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4 Author(s)
Halkias, G. ; Inst. of Microelectron. NCSR Demokritos, Athens, Greece ; Haralabidis, N. ; Kyriakis-Bitzaros, E.D. ; Katsafouros, S.

A performance optimized transimpedance amplifier (TIA) has been designed and fabricated for up to 3 Gb/s NRZ optical links. The amplifier is based on a standard foundry BiCMOS technology which utilizes 0.8 μm BJT emitter width and poly-Si capacitors and resistors. It exhibits a transimpedance gain of 62 dBΩ over the -3 dB bandwidth of DC-1.7 GHz and a DC power consumption of 137 mW when biased at +5 V and being AC coupled to the load. The equivalent input noise current density is 9.8 pA/√Hz (including the contribution of the 0.5 pF photodiode) for the bandwidth of 1.7 GHz and the input optical sensitivity is -23.3 dBm at a BER=10-9 In addition, the electrical dynamic range is 49.6 dB, when a 1 V output signal is considered, and it was designed to be unconditionally stable with a relatively large tolerance on external bias conditions. The circuit represents the first reported TIA, which combines such features, using conventional 0.8 μm BiCMOS transistors with fT=12 GHz and fMAX=4 GHz

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Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on  (Volume:5 )

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