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Buried-channel MOSFET model for SPICE

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2 Author(s)
Van der Tol, M.J. ; Dept. of Electr. Eng., Waterloo Univ., Ont., Canada ; Chamberlain, Savvas G.

A buried-channel (BC) MOSFET model for DC, transient and small-signal circuit simulation, which has been incorporated into SPICE 3B1, is presented. The model includes all of the modes of operation inherent to the BC-MOSFET, including the partial modes of operation. The equivalent circuit for the BC-MOSFET is presented, and the static, transient, and small-signal equations used for SPICE implementation are systematically described. The surface and bulk mobility models used in the static current-voltage characteristic are highlighted. The charge model and the importance of incorporating all of the models of operation are illustrated. A number of examples are given to illustrate the BC-MOSFET SPICE model. It is shown that the SPICE model for the BC-MOSFET is in good agreement with experimental measurements

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Computer-Aided Design of Integrated Circuits and Systems, IEEE Transactions on  (Volume:10 ,  Issue: 8 )