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A 1.8-GHz CMOS VCO tuned by an accumulation-mode MOS varactor

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2 Author(s)
Andreani, P. ; Dept. of Appl. Electron., Lund Univ., Sweden ; Mattisson, S.

This work presents a 1.8-GHz VCO tuned by a pMOS capacitor working exclusively in the accumulation and depletion regions. The VCO has been fabricated in a standard 0.6 μm CMOS process. It shows a tuning range of about 11% and a phase noise of -137 dBc/Hz at 3 MHz offset from the carrier, for a current consumption of 2.7 mA. The VCO compares favorably with a CMOS VCO tuned by a reverse biased diode varactor

Published in:

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on  (Volume:1 )

Date of Conference:

2000