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A high voltage IGBT and diode chip set designed for the 2.8 kV DC link level with short circuit capability extending to the maximum blocking voltage

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4 Author(s)
F. Bauer ; ABB Semicond. AG, Lenzburg, Switzerland ; N. Kaminski ; S. Linder ; H. Zeller

This paper presents the experimental characteristics of a high voltage IGBT and diode chip set designed for safe operation under hard switching conditions at the 2.8 kV DC link level. The fundamental goal of the design is a low cosmic ray induced failure rate for diodes as well as IGBTs at the DC link level. At the same time all the common requirements of low static and dynamic losses as well as wide SOA under turn-off, reverse recovery and short-circuit conditions are fulfilled. The blocking capability of these devices exceeds 4.5 kV by far

Published in:

Power Semiconductor Devices and ICs, 2000. Proceedings. The 12th International Symposium on

Date of Conference:

2000