By Topic

Radiation damage studies with STAR silicon drift detectors

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$33 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

22 Author(s)

Large (6.3×6.3 cm2) linear Silicon Drift Detectors were developed for use in the SVT, the inner tracking detector of the STAR experiment at the RHIC Collider. The concern of this paper is to estimate the effects of neutron and proton radiation damage to these devices and associated electronics. Detectors and their associated electronics were irradiated with 1011-1012/cm2, 1 MeV equivalent neutrons and 1010-1012/cm2, 24 GeV protons. I-V and C-V characteristics of diode test structures were used to determine depletion voltages, lifetimes, and reverse bias values. Measurements of the voltage and drift linearity with laser injection show the effects of irradiation on the detector performance. Measurements of noise levels show the effects of irradiation on the front-end electronics

Published in:

IEEE Transactions on Nuclear Science  (Volume:47 ,  Issue: 3 )