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Charge preamplifier for hole collecting PIN diode and integrated tetrode N-JFET

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6 Author(s)

“On-chip” electronics fabricated on 6 KΩ cm high resistivity wafer is fully characterized and spectroscopic measurements carried out. A new charge sensitive circuit is introduced to amplify the hole signals with on-chip n-channel JFETs and without any resetting devices. The JFET gate-source junction is forward biased and the drain current is stabilized by a low frequency feedback on the JFET p+ well contact (used as a buried gate for the JFET). Preliminary setups with PIN diodes and tetrode n-JFETs are successfully tested. With about 5 pF total input capacitance, resolution of 86 rms electrons at 223 K with 10 μs shaping time is obtained. With about 3 pF, 60 rms electrons at 298 K with 10 μs are obtained

Published in:

Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 3 )

Date of Publication:

Jun 2000

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