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Characterization of silicon pixel detectors with the n+/n/p+ and double-sided multiguard ring structure before and after neutron irradiation

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8 Author(s)
Cho, H.S. ; Dept. of Phys. & Astron., Johns Hopkins Univ., Baltimore, MD, USA ; Xie, X.B. ; Chien, C.Y. ; Liang, G.W.
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The lifetime of silicon detectors in a severe radiation environment at CERN LHC depends strongly upon careful detector design and material selection, due to the anticipated radiation-induced damage. We fabricated recently more radiation-tolerant CMS forward pixel sensors with new designs of silicon pixel detectors with the n+/n/p + and double-sided multiguard ring structure. Electrical characterization of such devices was performed before and after irradiation to neutron fluences (1 MeV equivalent) up to 6×1014 n/cm2, measuring leakage current, potential distribution over the guard rings and full depletion voltage. Studies on the radiation hardness using oxygen-enriched silicon substrates are being presented separately

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Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 3 )