Cart (Loading....) | Create Account
Close category search window

Total dose behavior of partially depleted SOI dynamic threshold voltage MOS (DTMOS) for very low supply voltage applications (0.6-1 V)

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

7 Author(s)
Ferlet-Cavrois, V. ; CEA, Centre d''Etudes de Bruyeres-le-Chatel, France ; Paillet, P. ; Musseau, O. ; Leray, J.L.
more authors

The DTMOS architecture is particularly suited to very low supply voltage applications (0.6-1 V). This paper presents DTMOS devices processed with a partially depleted 0.25 μm SOI technology. It analyses their electrical behavior under total dose irradiation

Published in:

Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 3 )

Date of Publication:

Jun 2000

Need Help?

IEEE Advancing Technology for Humanity About IEEE Xplore | Contact | Help | Terms of Use | Nondiscrimination Policy | Site Map | Privacy & Opting Out of Cookies

A not-for-profit organization, IEEE is the world's largest professional association for the advancement of technology.
© Copyright 2014 IEEE - All rights reserved. Use of this web site signifies your agreement to the terms and conditions.