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4H-SiC MESFETs behavior after high dose irradiation

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5 Author(s)
Brisset, C. ; CEA, Centre d''Etudes Nucleaires de Saclay, Gif-sur-Yvette, France ; Noblanc, O. ; Picard, C. ; Joffre, F.
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This study investigates the response of two MESFET 4H-SiC structures to irradiation at very high total dose levels. It demonstrates that electrically active defects created or stimulated by irradiation change the component response. A MESFET with a semi-insulating substrate exhibits better dose response than one with a buffer layer between channel and conductive substrate

Published in:

Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 3 )