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Improving the radiation hardness properties of silicon detectors using oxygenated n-type and p-type silicon

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3 Author(s)
G. Casse ; Oliver Lodge Lab., Liverpool Univ., UK ; P. P. Allport ; M. Hanlon

The degradation of the electrical properties of silicon detectors exposed to 24 GeV/c protons were studied using pad diodes made from different silicon materials. Standard high grade p-type and n-type substrates and oxygenated n-type substrates have been used. The diodes were studied in terms of reverse current (Ir) and full depletion voltage (Vfd) as a function of fluence. The oxygenated devices from different suppliers with a variety of starting materials and techniques, all show a consistent improvement of the degradation rate of Vfd and CCE compared to un-oxygenated substrate devices

Published in:

IEEE Transactions on Nuclear Science  (Volume:47 ,  Issue: 3 )