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SPICE modeling of the transient response of irradiated MOSFETs

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6 Author(s)
V. Pouget ; IXL, Bordeaux I Univ., Talence, France ; H. Lapuyade ; D. Lewis ; Y. Deval
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A new SPICE model of irradiated MOSFET taking into account the real response of the four electrodes is proposed. A comparison between SPICE-generated transient response and PISCES device simulation demonstrates the accuracy benefits when used in complex electronic architectures

Published in:

IEEE Transactions on Nuclear Science  (Volume:47 ,  Issue: 3 )