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Charge-collection efficiency of GaAs field effect transistors fabricated with a low-temperature grown buffer layer: Dependence on charge deposition profile

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4 Author(s)
McMorrow, D. ; Naval Res. Lab., Washington, DC, USA ; Knudson, A.R. ; Melinger, J.S. ; Buchner, S.

The dependence of the charge-collection processes of LT GaAs field-effect transistors on the depth profile of the deposited carriers is examined using computer simulation and laser-induced charge-collection measurements. The charge-collection simulations reveal a surprising dependence of the charge-collection efficiency on the location of the deposited charge, such that the charge-collection efficiency is largest for charge deposition below the LT GaAs buffer layer. These results implicate the significant role of charge-enhancement phenomena in the charge-collection processes of LT GaAs FETs. Experimental measurements performed as a function of the optical penetration depth support the conclusions of the simulation study

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Nuclear Science, IEEE Transactions on  (Volume:47 ,  Issue: 3 )