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Evaluation of non-linear modelling techniques for MOSFETs based on vectorial large-signal measurements

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7 Author(s)
Schreurs, D. ; Div. ESAT-TELEMIC, Katholieke Univ., Leuven, Belgium ; Vandenberghe, S. ; Carchon, G. ; Nauwelaers, B.
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Non-linear MOSFET models are mostly derived indirectly from DC, low-frequency C-V and/or high-frequency S-parameter measurements. We developed non-linear modelling techniques that determine the state functions of MOSFETs directly from high-frequency vectorial large-signal measurements and thus eliminate the small-signal detour. Two methods are proposed to determine these state functions: parameter optimisation and extraction. Both approaches yield accurate results. Hence, the main difference is the application range. The method of parameter optimisation quickly generates accurate non-linear models for particular applications, while the extraction method is preferred to determine general non-linear models

Published in:

Circuits and Systems, 2000. Proceedings. ISCAS 2000 Geneva. The 2000 IEEE International Symposium on  (Volume:2 )

Date of Conference:

2000