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Single electron memory characteristic of silicon nanodot nanowire transistor

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10 Author(s)
Tsutsumi, T. ; Electrotech. Lab., Ibaraki, Japan ; Ishii, K. ; Suzuki, E. ; Hiroshima, H.
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The authors have successfully fabricated an Si nanodot nanowire memory transistor using an inorganic SiO2 EB resist process for the formation of a 15 nm wide Si nanowire and an RTO process of an ultra-thin a-Si:H film for the ultra-small Si nanodot formation. In the fabricated Si nanodevice, a very large single electron charging effect, i.e. ΔVth of 0.72 V, is experimentally observed and ΔVth of 2.2 V at 3 electrons is confirmed at room temperature. The developed technology may be useful for opening the way towards future Si nanodevices

Published in:

Electronics Letters  (Volume:36 ,  Issue: 15 )