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Reducing source and drain resistances in InGaP/InGaAs doped-channel HFETs using δ-doping Schottky layer

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5 Author(s)
H. C. Chiu ; Dept. of Electr. Eng., Feng Chia Univ., Taichung, Taiwan ; F. T. Chien ; S. C. Yang ; C. W. Kuo
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InGaP/InGaAs/GaAs dual doped-channel field-effect transistors (DCFETs) have been fabricated and demonstrated in terms of their DC, RF, and power performances. These performances can be improved by inserting a δ-doping layer on top of the undoped Schottky layer, which can reduce the ohmic contact resistances of DCFETs

Published in:

Electronics Letters  (Volume:36 ,  Issue: 15 )