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Low threshold 650 nm band real refractive index-guided AlGaInP laser diodes with strain-compensated MQW active layer

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8 Author(s)
S. Honda ; LED Div., Tottori Sanyo Electr. Co Ltd., Japan ; T. Miyake ; T. Ikegami ; K. Yagi
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650 nm band real refractive index-guided AlGaInP laser diodes with a strain-compensated MQW active layer have been successfully fabricated. A threshold current of 9 mA, which is the lowest ever reported was achieved and 5 mW operation was obtained up to 120°C. These lasers have been operated for >3000 h under 5 mW at 90°C

Published in:

Electronics Letters  (Volume:36 ,  Issue: 15 )