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A model for GRIN-SCH-SQW diode lasers

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3 Author(s)
Chinn, S.R. ; General Electric Co., Syracuse, NY, USA ; Zory, P.S., Jr. ; Reisinger, A.R.

A comprehensive model for graded-index, separate-confinement-heterostructure, single-quantum-well (GRIN-SCH-SQW) AlxGa1-xAs diode lasers is presented, and compared with experimental data. The model combines many individual features not heretofore included together, and gives good agreement with gain-vs.-current density data for different structure variations. In addition, the threshold temperature dependence agrees well with data for typical laser conditions, and the high-gain kink in T0 versus temperature is qualitatively explained

Published in:

Quantum Electronics, IEEE Journal of  (Volume:24 ,  Issue: 11 )

Date of Publication:

Nov 1988

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