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A 1.9 GHz low voltage CMOS power amplifier for medium power RF applications

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3 Author(s)
A. Giry ; STMicroelectron., Crolles, France ; J. -M. Fourniert ; M. Pons

This paper describes the design methodology and measured performances of a monolithic two-stage RF power amplifier realized in a 0.35 /spl mu/m CMOS technology. Under 2.5 V supply, good linearity is achieved and an output power of 23.5 dBm with an associated PAE of 35% is obtained at 19 GHz. The obtained performances give an insight into CMOS potentialities for medium power RF amplification.

Published in:

Radio Frequency Integrated Circuits (RFIC) Symposium, 2000. Digest of Papers. 2000 IEEE

Date of Conference:

10-13 June 2000