By Topic

Ultralow k SiO2 thin films with nano-voids by gas-evaporation technique

Sign In

Cookies must be enabled to login.After enabling cookies , please use refresh or reload or ctrl+f5 on the browser for the login options.

Formats Non-Member Member
$31 $13
Learn how you can qualify for the best price for this item!
Become an IEEE Member or Subscribe to
IEEE Xplore for exclusive pricing!
close button

puzzle piece

IEEE membership options for an individual and IEEE Xplore subscriptions for an organization offer the most affordable access to essential journal articles, conference papers, standards, eBooks, and eLearning courses.

Learn more about:

IEEE membership

IEEE Xplore subscriptions

5 Author(s)
Nozaki, Shinji ; Dept. of Electron. Eng., Univ. of Electro-Commun., Chofu, Japan ; Banerjee, Souri ; Uchida, Kazuo ; Ono, Hiroshi
more authors

We have developed the gas evaporation technique to deposit ultralow-k (as low as 1.7) SiO2 thin films with nanometer-size voids. In the technique silicon (Si) in a boat was evaporated in argon gas containing a small amount of oxygen. Although the film contains many nanometer-size voids, it is tolerant of moisture and does not show a change in the dielectric constant or the resistance with time. The SiO2 film deposited by the gas evaporation technique is a good candidate for a low-k dielectric in the future Si VLSI

Published in:

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Date of Conference: