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Ultralow k SiO2 thin films with nano-voids by gas-evaporation technique

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5 Author(s)
Nozaki, Shinji ; Dept. of Electron. Eng., Univ. of Electro-Commun., Chofu, Japan ; Banerjee, Souri ; Uchida, Kazuo ; Ono, Hiroshi
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We have developed the gas evaporation technique to deposit ultralow-k (as low as 1.7) SiO2 thin films with nanometer-size voids. In the technique silicon (Si) in a boat was evaporated in argon gas containing a small amount of oxygen. Although the film contains many nanometer-size voids, it is tolerant of moisture and does not show a change in the dielectric constant or the resistance with time. The SiO2 film deposited by the gas evaporation technique is a good candidate for a low-k dielectric in the future Si VLSI

Published in:

Interconnect Technology Conference, 2000. Proceedings of the IEEE 2000 International

Date of Conference:

2000