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Gain partitioning: a new approach for analyzing the high-frequency performance of compound semiconductor FETs

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1 Author(s)
Vickes, H. ; Dept. of Electr. Eng., Chalmers Univ. of Technol., Gothenburg, Sweden

A novel approach for analyzing the high-frequency performance of compound semiconductor FETs is presented. The approach is based on a circuit description that separates intrinsic and parasitic circuit elements of active devices in a general way. Mason's gain (U) and current gain (Ai) are used to illustrate this approach. Significant results from U are related to a more commonly used nomenclature involving maximum stable gain and maximum available gain and, in particular, to the transition from a potentially unstable device to a potentially stable device. Results show that the requirements for maximizing these cutoff frequencies are different. Minimized parasitic circuit elements maximize fτ. A maximized fmax, on the contrary, may be obtained if interactions of parasitic and intrinsic circuit elements satisfy certain conditions

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:39 ,  Issue: 8 )

Date of Publication:

Aug 1991

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