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Submicron-gate InP power MISFET's with improved output power density at 18 and 20 GHz

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7 Author(s)
Biedenbender, Michael D. ; Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA ; Kapoor, Vik J. ; Shalkhauser, K.A. ; Messick, L.J.
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The microwave characteristics at 18 and 20 GHz of submicron-gate indium phosphide (InP) metal-insulator-semiconductor field-effect transistors (MISFETs) for high output power density applications are presented. InP power MISFETs were fabricated with 0.7 μm gate lengths, 0.2 mm gate widths, and drain-source spacings of 2, 3 and 5 μm. The output power density was investigated as a function of drain-source spacing. The best output power density and gain were obtained for drain-source spacings of 3 μm. At 18 GHz output power densities of 1.59 W/mm with a gain of 3.47 dB and a power-added efficiency of 20.0% were obtained for a drain-source spacing of 3 μm. At 20 GHz output power densities of 1.20 W/mm with a gain of 3.17 dB and a power-added efficiency of 13.6% were obtained for a drain-source spacing of 3 μm

Published in:

Microwave Theory and Techniques, IEEE Transactions on  (Volume:39 ,  Issue: 8 )

Date of Publication:

Aug 1991

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