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Measurement and analysis of GaAs MESFET parasitic capacitances

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2 Author(s)
Anholt, R. ; Gateway Modeling Inc., Minneapolis, MN, USA ; Swirhun, S.

From S-parameter measurements and subsequent equivalent-circuit parameter (ECP) extraction for a series of 0.25-μm, ion-implanted GaAs MESFETs with different widths and different gate-source and drain-source spacings, parasitic FET pad capacitances and interelectrode capacitances. The active-FET fringe capacitances extracted at pinch-off are compared with results from two-dimensional Poisson simulations

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:39 ,  Issue: 7 )