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Indium gallium arsenide microwave power transistors

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7 Author(s)
Johnson, Gregory A. ; Dept. of Electr. & Comput. Eng., Cincinnati Univ., OH, USA ; Kapoor, Vik J. ; Shokrani, M. ; Messick, L.J.
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Depletion-mode InGaAs microwave power MISFETs with 1-μm gate lengths and up to 1-mm gate widths have been fabricated using an ion-implanted process. The devices employed a plasma-deposited silicon/silicon dioxide gate insulator. The DC current-voltage (I -V) characteristics and RF power performance at 9.7 GHz are presented. The output power, power-added efficiency, and power gain as a function of input power are reported. An output power of 1.07 W at 9.7 GHz with a corresponding power gain and power-added efficiency of 4.3 dB and 38%, respectively, was obtained. The large-gate-width devices provided over twice the previously reported output power for InGaAs MISFETs at X-band. In addition, the first report of RF output stability of InGaAs MISFETs over 24 h period is also presented. An output power stability within 1.2% over 24 h of continuous operation was achieved. In addition, a drain current drift of 4% over 104 s was obtained

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Microwave Theory and Techniques, IEEE Transactions on  (Volume:39 ,  Issue: 7 )